Nanobelt and nanosaw structures of II-VI semiconductors

被引:54
作者
Ma, Christopher [1 ]
Moore, Daniel [1 ]
Ding, Yong [1 ]
Li, Jing [1 ]
Wang, Zhong Lin [1 ]
机构
[1] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
关键词
nanobelt; nanosaw; II-VI Semiconductors; CdSe; CdS; ZnS; ZnSe; nanoribbon;
D O I
10.1504/IJNT.2004.005978
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The II-VI semiconductors are important optoelectronic, luminescent, and lasing materials. This paper presents a review on synthesis, structure, and growth mechanisms of one-dimensional nanostructures of ZnS, CdSe, ZnSe, CdS and CdO. The two most frequently received wurtzite structures of these materials are 'nanobelts' and 'nanosaws'. The nanosaws are suggested to be a result of atomic-termination induced asymmetric growth due to the cation-terminated, catalytically active (0001) surface, while the anion-terminated (000 (1) over bar) is chemically inactive. It has also been shown that the phase transformation from wurtzite to zinc blend could also be a factor in initiating the growth of the saw teeth. The applications and nanodevices that have been built using nanobelts are also presented.
引用
收藏
页码:431 / 451
页数:21
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