Lifetimes of hydrogen and deuterium related vibrational modes in silicon -: art. no. 145501

被引：41

作者：

Budde, M

Lüpke, G

Chen, E

Zhang, X

Tolk, NH

Feldman, LC

Tarhan, E

Ramdas, AK

Stavola, M

机构：

[1] Vanderbilt Univ, Dept Phys & Astron, Nashville, TN 37235 USA

[2] Coll William & Mary, Dept Appl Sci, Williamsburg, VA 23187 USA

[3] Lehigh Univ, Dept Phys, Bethlehem, PA 18015 USA

[4] Purdue Univ, Dept Phys, W Lafayette, IN 47907 USA

来源：

PHYSICAL REVIEW LETTERS | 2001年 / 87卷 / 14期

关键词：

D O I：

10.1103/PhysRevLett.87.145501

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Lifetimes of hydrogen and deuterium related stretch modes in Si are measured by high-resolution infrared absorption spectroscopy and transient bleaching spectroscopy. The lifetimes are found to be extremely dependent on the defect structure, ranging from 2 to 295 ps. Against conventional wisdom, we find that lifetimes of Si-D modes typically are longer than for the corresponding Si-H modes. The potential implications of the results on the physics of electronic device degradation are discussed.

引用

页码：145501/1 / 145501/4

页数：4

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