Propagation loss in single-mode GaAs-AlGaAs microring resonators: Measurement and model

被引:108
作者
Van, V [1 ]
Absil, PP
Hryniewicz, JV
Ho, PT
机构
[1] Lab Phys Sci, College Pk, MD 20740 USA
[2] Univ Maryland, Dept Elect & Comp Engn, College Pk, MD 20742 USA
基金
加拿大自然科学与工程研究理事会;
关键词
integrated optics; microring resonators; propagation loss; semiconductor microresonators;
D O I
10.1109/50.964074
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report propagation loss measurements in single-mode GaAs-AlGaAs racetrack microresonators with bending radii from 2.7 mum to 9.7 mum. The experimental data were found to be in good agreement with a physical-loss model which accounts for the bending loss, the scattering loss due to surface roughness on the waveguide sidewalls, and the transition loss at the straight-to-bend waveguide junctions. The model also enables us to identify the dominant loss mechanisms in semiconductor microcavities. We found that for racetracks with large bending radii (greater than 4 mum, in our case) the loss due to surface-roughness scattering in the curved waveguides dominates, whereas for small-radius rings, the modal mismatch at the straight-to-bend waveguide junctions causes the biggest loss. This result suggests that circular-shaped rings are preferable in the realization of ultrasmall low-loss microcavities. We also show that the round-trip propagation loss in small-radius racetrack microresonators can be minimized by introducing a lateral offset at the straight-to-bend waveguide junctions.
引用
收藏
页码:1734 / 1739
页数:6
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