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Thin film transistors based on sputtered silicon and gate oxide films
被引：1
作者：
Jelenkovic, EV
Tong, KY
Ong, CW
机构：
来源：
1996 IEEE HONG KONG ELECTRON DEVICES MEETING, PROCEEDINGS
|
1996年
关键词：
D O I：
10.1109/HKEDM.1996.566302
中图分类号：
TM [电工技术];
TN [电子技术、通信技术];
学科分类号：
0808 ;
0809 ;
摘要：
In this work furnace crystallization of sputtered silicon films was investigated in the temperature range from 600 to 1250 degrees C. They were characterized by XRD, TEM and ESR. The crystallization process was analyzed from the structural zone model [5], and inclusion of argon and oxygen [7]. Electrical properties of high temperatur crystallized Si-film TET with sputtered silicon dioxide were correlated to crystallization parameters, Such TFTs exhibit high level of electrical stability.
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页码：41 / 44
页数：4
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