High performance n-type PbTe-based materials for thermoelectric applications

被引：230

作者：

Gelbstein, Y ^{[1
]}

Dashevsky, Z ^{[1
]}

Dariel, MP ^{[1
]}

机构：

[1] Ben Gurion Univ Negev, Dept Mat Engn, IL-84105 Beer Sheva, Israel

来源：

PHYSICA B-CONDENSED MATTER | 2005年 / 363卷 / 1-4期

关键词：

transport properties; lead telluride semiconductor; thermoelectrics; figure of merit;

D O I：

10.1016/j.physb.2005.03.022

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Lead telluride-based compounds are known for their favorable thermoelectric properties in the 50-600 degrees C temperature range. The transport properties of homogeneous, cold-compacted and sintered PbI2-doped PbTe samples were measured and compared to those of cast samples with similar dopant concentrations. Such a comparison is mandatory in order to determine the potential of graded samples, prepared by powder metallurgy, for thermoelectric applications. The present work focuses on improving the thermoelectric efficiency of PbTe-based materials by functional grading and by taking advantage of the specific features of indium as dopant element. The potential for achieving high thermoelectric efficiency in In-doped n-type PbTe-based thermoelectric compounds is described, and is compared to that of PbI2-doped PbTe. Design, synthesis and characterization procedures are reported for fabricating In- and PbI2-doped PbTe compounds with desired composition profiles. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：196 / 205

页数：10

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