High-frequency application of MOS compact models and their development for scalable RF model libraries

被引：41

作者：

Pehlke, DR ^{[1
]}

Schroter, M ^{[1
]}

Burstein, A ^{[1
]}

Matloubian, M ^{[1
]}

Chang, MF ^{[1
]}

机构：

[1] Rockwell Sci Ctr, Thousand Oaks, CA 91358 USA

来源：

IEEE 1998 CUSTOM INTEGRATED CIRCUITS CONFERENCE - PROCEEDINGS | 1998年

关键词：

D O I：

10.1109/CICC.1998.694967

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

The evaluation of MOS compact models, focusing on BSIM3v3, is performed with specific development described toward scalable RF libraries suitable for high-frequency mixed-signal circuit design. Additional parasitic elements are added to the compact model to better describe its operation at higher frequency. This extrinsic subcircuit includes the gate resistance and complex substrate admittance which are scalable and physically based, and a detailed parameter extraction procedure for each is described. Small-signal y-parameters and noise behavior of the extended model are used to verify the match to high-frequency on-wafer measurements.

引用

页码：219 / 222

页数：4