Current-induced effect on the resistivity of epitaxial thin films of La0.7Ca0.3MnO3 and La0.85Ba0.15MnO3

被引：113

作者：

Gao, J ^{[1
]}

Shen, SQ ^{[1
]}

Li, TK ^{[1
]}

Sun, JR ^{[1
]}

机构：

[1] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 26期

关键词：

D O I：

10.1063/1.1587001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electric-current-dependent resistance has been studied in epitaxial thin films of La0.7Ca0.3MnO3 and La0.85Ba0.15MnO3. Attention was focused at the influence of the applied dc current on the resistance of these epitaxial thin films in the absence of a magnetic field. A significant change in the ratio of the peak resistance at different currents or current resistance was found to be similar to23%-26% with a current density up to 8x10(4) Acm(-2). For both La0.7Ca0.3MnO3 and La0.85Ba0.15MnO3 compounds, the dependence of the measured resistance on the current revealed a good linear relationship. Although the nature behind such an effect has not been well understood yet, the feature that the resistance in doped manganese oxides could be easily controlled by the electric current should be of interest for various applications such as field effect devices. (C) 2003 American Institute of Physics.

引用

页码：4732 / 4734

页数：3

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