Computational study of charge accumulation at SnO2(110) surface

被引:33
作者
Mäki-Jaskari, MA
Rantala, TT
Golovanov, VV
机构
[1] Tampere Univ Technol, Inst Phys, FIN-33101 Tampere, Finland
[2] S Ukrainian Univ, UA-65008 Odessa, Ukraine
基金
芬兰科学院;
关键词
density functional calculations; surface electronic structure; semiconducting surfaces; tin oxide;
D O I
10.1016/j.susc.2005.01.004
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Features of SnO2(1 1 0) surfaces with a surplus electron are considered computationally by applying density functional method. The additional charge is found to influence on surface energetics and surface relaxations considerably with respect to the corresponding surfaces without additional charge. This effect is pronounced in the cases of oxidized surfaces, where different oxygen adsorbates (O, O-2 and O-3) tend to capture the charge. On stoichiometric surface, these oxygen species are adsorbed on-top of the five-fold coordinated surface tin atoms and are attributed to adsorbed O-, O-2(-) and O-3(-) species associated with spin polarization. Based on evaluated total energy differences formation of these species are compared. In cases of stoichiometric and slightly oxygen deficient surfaces without adsorbates, charge accumulation is qualitatively similar to the case of bulk SnO2 with a considerable amount of the surplus charge enriched around Sri atoms. A pronounced charge accumulation is observed around under-coordinated surface tin atoms of stoichiometric and oxygen deficient (110) surfaces. (C) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:127 / 138
页数:12
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