Pattern formation in semiconductors

被引:13
作者
Bel'kov, VV [1 ]
Hirschinger, J
Novák, V
Niedernostheide, FJ
Ganichev, SD
Prettl, W
机构
[1] Univ Regensburg, Inst Expt & Angew Phys, D-93040 Regensburg, Germany
[2] AV CR, Inst Elect Engn, Prague 18202 8, Czech Republic
关键词
D O I
10.1038/17040
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
[No abstract available]
引用
收藏
页码:398 / 398
页数:1
相关论文
共 7 条
[1]  
Eberle W, 1996, APPL PHYS LETT, V68, P3329, DOI 10.1063/1.116047
[2]   ELECTRON-HOLE CONDENSATION IN SEMICONDUCTORS [J].
JEFFRIES, CD .
SCIENCE, 1975, 189 (4207) :955-964
[3]   SELF-OSCILLATIONS AT PHOTOINDUCED IMPURITY BREAKDOWN IN GAAS [J].
KOZHEVNIKOV, M ;
ASHKINADZE, BM ;
COHEN, E ;
RON, A .
PHYSICAL REVIEW B, 1995, 52 (07) :4855-4863
[4]   RECOMBINATION-INDUCED NONEQUILIBRIUM PHASE-TRANSITIONS IN SEMICONDUCTORS [J].
LANDSBERG, PT ;
PIMPALE, A .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1976, 9 (07) :1243-1252
[5]  
LEVINSON IB, 1965, FIZ TVERD TELA+, V7, P1098
[6]   SPECIFIC NEGATIVE RESISTANCE IN SOLIDS [J].
RIDLEY, BK .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 82 (530) :954-&
[7]  
Scholl E, 1987, NONEQUILIBRIUM PHASE