Interfacial effects on the electrical properties of multiferroic BiFeO3/Pt/Si thin film heterostructures

被引：45

作者：

Yakovlev, S

Zekonyte, J

Solterbeck, CH

Es-Souni, M

机构：

[1] Univ Appl Sci Kiel, IMST, D-24149 Kiel, Germany

[2] Univ Kiel, Fac Engn, D-24143 Kiel, Germany

来源：

THIN SOLID FILMS | 2005年 / 493卷 / 1-2期

关键词：

bismuth ferrite; dielectric properties; leakage currents; interfaces;

D O I：

10.1016/j.tsf.2005.06.020

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Polycrystalline BiFeO3 thin films of various thickness were fabricated on (111)Pt/Ti/SiO2/Si substrates via chemical solution deposition. The electrical properties were investigated using impedance and leakage current measurements. X-ray photoelectron spectroscopy (XPS) combined with Ar ion milling (depth profiling) was used to investigate elemental distribution near the electrode-film interface. It is shown that the dielectric constant depends on film thickness due to the presence of an interfacial film-electrode layer evidenced by XPS investigation. Direct current conductivity is found to be governed by Schottky and/or Poole-Frenkel mechanisms. (c) 2005 Published by Elsevier B.V.

引用

收藏

页码：24 / 29

页数：6

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