Theoretical analysis of the growth mode for thin metallic films on oxide substrates

被引：35

作者：

Fuks, D ^{[1
]}

Dorfman, S

Kotomin, EA

Zhukovskii, YE

Stoneham, AM

机构：

[1] Ben Gurion Univ Negev, Dept Mat Engn, IL-84105 Beer Sheva, Israel

[2] Univ Osnabruck, Fachbereich Phys, D-49069 Osnabruck, Germany

[3] Technion Israel Inst Technol, Dept Phys, IL-32000 Haifa, Israel

[4] Latvian State Univ, Inst Solid State Phys, LV-1063 Riga, Latvia

[5] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

[6] UCL, Dept Phys & Astron, Ctr Mat Sci, London WC1E 6BT, England

来源：

PHYSICAL REVIEW LETTERS | 2000年 / 85卷 / 20期

关键词：

D O I：

10.1103/PhysRevLett.85.4333

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We show how the growth mode of a thin metallic film on an insulating substrate can be predicted theoretically by combining thermodynamic considerations with ab initio calculations for ordered metal/insulator interfaces at low coverage. Our approach is illustrated by calculations for Ag film deposited on an MgO substrate. Ab initio calculations predict high mobility of adsorbed Ag atoms on MgO, even at low temperatures, which greatly aids their aggregation.

引用

页码：4333 / 4336

页数：4

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