Reversal of spin polarization in Fe/GaAs (001) driven by resonant surface states: First-principles calculations

被引：74

作者：

Chantis, Athanasios N. ^{[1
]}

Belashchenko, Kirill D.

Smith, Darryl L.

Tsymbal, Evgeny Y.

van Schilfgaarde, Mark

Albers, Robert C.

机构：

[1] Los Alamos Natl Lab, Div Theoret, Los Alamos, NM 87545 USA

[2] Univ Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA

[3] Univ Nebraska, Nebraska Ctr Mat & Nanosci, Lincoln, NE 68588 USA

[4] Arizona State Univ, Sch Mat, Tempe, AZ 85287 USA

来源：

PHYSICAL REVIEW LETTERS | 2007年 / 99卷 / 19期

关键词：

D O I：

10.1103/PhysRevLett.99.196603

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A minority-spin resonant state at the Fe/GaAs(001) interface is predicted to reverse the spin polarization with the voltage bias of electrons transmitted across this interface. Using a Green's function approach within the local spin-density approximation, we calculate the spin-dependent current in a Fe/GaAs/Cu tunnel junction as a function of the applied bias voltage. We find a change in sign of the spin polarization of tunneling electrons with bias voltage due to the interface minority-spin resonance. This result explains recent experimental data on spin injection in Fe/GaAs contacts and on tunneling magnetoresistance in Fe/GaAs/Fe magnetic tunnel junctions.

引用

页数：4

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