Status and perspectives of nanoscale device modelling

被引：14

作者：

Macucci, M

Iannaccone, G

Greer, J

Martorell, J

Sprung, DWL

Schenk, A

Yakimenko, II

Berggren, KF

Stokbro, K

Gippius, N

机构：

[1] Univ Pisa, Dipartimento Ingn Informaz, I-56126 Pisa, Italy

[2] Natl Microelect Res Ctr, Cork, Ireland

[3] Univ Barcelona, Fac Fis, Dept Estructura & Constituents Mat, E-08028 Barcelona, Spain

[4] McMaster Univ, Dept Phys & Astron, Hamilton, ON L8S 4M1, Canada

[5] Swiss Fed Inst Technol, Integrated Syst Lab, CH-8092 Zurich, Switzerland

[6] Tech Univ Denmark, MIC, DK-2800 Lyngby, Denmark

[7] Russian Acad Sci, Inst Gen Phys, Moscow 117333, Russia

来源：

NANOTECHNOLOGY | 2001年 / 12卷 / 02期

关键词：

D O I：

10.1088/0957-4484/12/2/313

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

During the meetings of the theory and modelling working group, within the MEL-ARI (Microelectronics Advanced Research Initiative) and NID-FET (Nanotechnology information Devices-Future and Emerging Technologies) initiatives of the European Commission, we have been discussing the current status and the future perspectives of nanoscale device modelling. The outcome of such a discussion is summarized in the present paper, outlining the major challenges for the future, such as the integration of nonequilibrium phenomena and of molecular scale properties. We believe that modelling has a growing importance in the development of nanoelectronic devices and must therefore make a move from physics to engineering, providing valid design tools, with quantitative predictive capabilities.

引用

页码：136 / 142

页数：7

共 26 条

[1] Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 μm MOSFET's:: A 3-D "atomistic" simulation study [J].