Bonding and electronic properties of Cs3Te22

被引:42
作者
Boucher, F
Rousseau, R
机构
[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany
[2] Univ Nantes, Inst Mat Nantes, UMR C 6502 CNRS, F-44322 Nantes 3, France
关键词
D O I
10.1021/ic9714605
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
The compound Cs3Te22 is well-known for its interesting structural features. It contains both a unique 2,3-connected defect square Te sheet and Te-8 rings. For a better understanding of the structure and bonding, the band structure of Cs3Te22 is examined by means of the ab initio tight-binding linear muffin-tin orbital (TB-LMTO) method, which is based upon density functional theory (DFT). The calculations are complemented by an analysis of the electronic density topology with the electron localization function (ELF) and a traditional orbital analysis using the projected density of states (DOS) and the crystal orbital Hamiltonian population (COHP). Our study indicates that the short Te-Te contacts between Te-8 rings and the defect Te-6(3-) sheet in this compound have a direct influence upon the properties of this material. The presence of this interaction perturbs the electronic density relative to that which one obtains from analysis of the isolated defect sheet and leads to favorable conditions for an insulator state.
引用
收藏
页码:2351 / 2357
页数:7
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