Growth of Co on a stepped and on a flat Cu(001) surface

被引：66

作者：

Ramsperger, U

Vaterlaus, A

Pfaffli, P

Maier, U

Pescia, D

机构：

[1] Laboratorium für Festkörperphysik, Mikrostrukturforschung, Eidgenössische Technische Hochschule-Hönggerberg

来源：

PHYSICAL REVIEW B | 1996年 / 53卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.53.8001

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The growth of Co on Cu(001) is investigated with scanning tunneling microscopy (STM), Auger electron spectroscopy, and low-energy electron diffraction. Island shape and size differs drastically for Co evaporated onto a flat or a stepped Cu(001) surface. Deviations from ideal layer-by-layer growth are small. Evaporating at 540 K results in an island free surface, annealing to 495 K induces depressions into the Co islands but does not change their shape and arrangement. A retarding field Auger system and an Anger spectrometer with cylindrical mirror analyzer are calibrated simultaneously with the help of the STM.

引用

页码：8001 / 8006

页数：6

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