A 16W, 40% efficient, continuous wave, 4H SiC, L-band SIT.

被引：6

作者：

Clarke, RC ^{[1
]}

Morse, AW ^{[1
]}

Esker, P ^{[1
]}

Curtice, WR ^{[1
]}

机构：

[1] Northrop Grumman Sci & Technol Ctr, Baltimore, MD USA

来源：

2000 IEEE/CORNELL CONFERENCE ON HIGH PERFORMANCE DEVICES, PROCEEDINGS | 2000年

关键词：

D O I：

10.1109/CORNEL.2000.902530

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Wide bandgap transistor developments described in this work include CW SiC SITs with output powers at L-band of 16W/cm, and increased breakdown voltage SITs having a 400V blocking voltage and 35W/cm output power. Progress with pulse devices includes a 800W UHF SIT and a 900W L-band SIT.

引用

页码：141 / 143

页数：3