Effect of bulk inversion asymmetry on the Datta-Das transistor -: art. no. 081201

被引：35

作者：

Lusakowski, A ^{[1
]}

Wróbel, J ^{[1
]}

Dietl, T ^{[1
]}

机构：

[1] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

来源：

PHYSICAL REVIEW B | 2003年 / 68卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.68.081201

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A model of the Datta-Das spin field-effect transistor is presented which, in addition to the Rashba interaction, takes into account the influence of bulk inversion asymmetry of zinc-blende semiconductors. In the presence of bulk inversion asymmetry, the conductance is found to depend significantly on the crystallographic orientation of the channel. We determine the channel direction optimal for the observation of the Datta-Das effect in GaAs- and InAs-based devices.

引用

页数：4

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