Chemical vapor deposition of nickel oxide films from Ni(C5H5)2/O2

被引:91
作者
Kang, JK [1 ]
Rhee, SW [1 ]
机构
[1] Pohang Univ Sci & Technol, Dept Chem Engn, LAMP, POSTECH, Pohang 790784, South Korea
关键词
nickel oxide film; Ni(C5H5)(2); metal organic chemical vapor deposition; diagnostics of gas phase reaction;
D O I
10.1016/S0040-6090(01)00962-2
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Nickel oxide films were deposited with Ni(C5H5)(2)(bis-cyclopentadienyl nickel)/O-2 at various temperatures and O-2 flow rates. Gas phase reaction of Ni(C5H5)(2)/O-2 was observed above the temperature of 300 degreesC and a peak from CO2, the product of the Ni(C5H5)(2) oxidation, was observed. Pure oxide films were not obtained but a mixed phase of nickel, NiO and Ni2O3 was observed and the amount of each phase in the film depended on the deposition condition. Films deposited at a high deposition temperature region (> 275 degreesC) had a high nickel content, and NiO(111) preferred crystal orientation. Films deposited at a low deposition temperature region (< 275 degreesC) had low nickel content and NiO(200) preferred orientation. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:57 / 61
页数:5
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