Ohmic contacts to p-type GaN using a Ni/Pt/Au metallization scheme

被引：42

作者：

Jang, JS

Park, KH

Jang, HK

Kim, HG

Park, SJ ^{[1
]}

机构：

[1] Kwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 506712, South Korea

[2] Kwangju Inst Sci & Technol, Ctr Elect Mat Res, Kwangju 506712, South Korea

[3] Kumho Informat & Telecommun Lab, Kwangju 506712, South Korea

[4] Korea Adv Inst Sci & Technol, Photon Res Ctr, Seoul, South Korea

[5] Kwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 506712, South Korea

[6] Kwangju Inst Sci & Technol, Ctr Elect Mat Res, Kwangju 506712, South Korea

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1998年 / 16卷 / 06期

关键词：

D O I：

10.1116/1.590448

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report a new Ni/Pt/Au trilayer metallization scheme for the formation of ohmic contact to p-GaN. Metal thin films with a thickness of 20 nm for Ni, 30 nm for Pt, and 80 nm for Au were deposited on the p-GaN layer (N-a = 9.4 x 10(16) cm(-3)) by electron beam evaporation. The samples, annealed at 500 degrees C for 30 s in a rapid thermal anneal system, showed a high quality ohmic contact with a low specific contact resistance of 2.1 x 10(-2) Omega cm(2). Auger electron spectroscopy analysis of the contact layers suggests that Pt plays an important role in the formation of ohmic contact, indicating that a Ni/Pt/Au trilayer can be used and that it is a promising material system for ohmic contact to p-GaN. (C) 1998 American Vacuum Society. [S0734-211X(98)00606-4].

引用

页码：3105 / 3107

页数：3

共 14 条

[1] Very low resistance multilayer ohmic contact to n-GaN [J].