Electrical characteristics of ZrOxNy prepared by NH3 annealing of ZrO2

被引：84

作者：

Jeon, S ^{[1
]}

Choi, CJ ^{[1
]}

Seong, TY ^{[1
]}

Hwang, H ^{[1
]}

机构：

[1] Kwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 02期

关键词：

D O I：

10.1063/1.1385347

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electrical characteristics of ZrOxNy prepared by NH3 annealing of ZrO2 were investigated for use in metal-oxide-semiconductor gate dielectric applications. Compared with conventional ZrO2, ZrOxNy exhibits excellent electrical characteristics such as high accumulation capacitance, low leakage current density, and superior thermal stability. Based on high resolution transmission electron microscope analysis of both ZrO2 and ZrOxNy samples which had been annealed at 800 degreesC for 5 min, the ZrO2 exhibited a polycrystalline state but the ZrOxNy was amorphous in structure. In addition, the thickness of ZrOxNy was thinner than that of ZrO2. The improvement in electrical characteristics can be explained by the better thermal stability and lower rate of oxidation of ZrOxNy. (C) 2001 American Institute of Physics.

引用

页码：245 / 247

页数：3

共 9 条

[1] Intermixing at the tantalum oxide/silicon interface in gate dielectric structures [J].

Alers, GB ;

Werder, DJ ;

Chabal, Y ;

Lu, HC ;

Gusev, EP ;

Garfunkel, E ;

Gustafsson, T ;

Urdahl, RS .

APPLIED PHYSICS LETTERS, 1998, 73 (11) :1517-1519

[2] Nitrogen plasma annealing for low temperature Ta2O5 films [J].

Alers, GB ;

Fleming, RM ;

Wong, YH ;

Dennis, B ;

Pinczuk, A ;

Redinbo, G ;

Urdahl, R ;

Ong, E ;

Hasan, Z .

APPLIED PHYSICS LETTERS, 1998, 72 (11) :1308-1310

[3] Structure and stability of ultrathin zirconium oxide layers on Si(001) [J].

Copel, M ;

Gribelyuk, M ;

Gusev, E .

APPLIED PHYSICS LETTERS, 2000, 76 (04) :436-438

[4]

GUO C, 1999, INT EL DEV M, P137

[5] Electrical characteristics of AlOxNy prepared by oxidation of sub-10-nm-thick AlN films for MOS gate dielectric applications [J].

Jeon, S ;

Jang, H ;

Kim, H ;

Noh, D ;

Hwang, H .

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2000, 37 (06) :886-888

[6] Electrical characteristics of an ultrathin (1.6 nm) TaOxNy gate dielectric [J].

Jung, H ;

Im, K ;

Hwang, H ;

Yang, D .

APPLIED PHYSICS LETTERS, 2000, 76 (24) :3630-3631

[7]

Ma Y., 1999, INT EL DEV M, P149

[8]

QI WJ, 1999, VLSI S, P41

[9]

*SEM IND ASS, 1999, NAT TECHN ROADM SEM

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