Pulsed laser deposition of nasicon thin films

被引：12

作者：

Izquierdo, R

Hanus, F

Lang, T

Ivanov, D

Meunier, M

Laude, L

Currie, JF

Yelon, A

机构：

[1] ECOLE POLYTECH MONTREAL,DEPT GEN PHYS,MONTREAL,PQ H3C 3A7,CANADA

[2] UNIV MONS HAINAUT,DEPT MAT,LAB PHYS ETAT SOLIDE,B-7000 MONS,BELGIUM

来源：

APPLIED SURFACE SCIENCE | 1996年 / 96-8卷

基金：

加拿大自然科学与工程研究理事会;

关键词：

D O I：

10.1016/0169-4332(95)00566-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have deposited NASICON (Na SuperIonic CONductor) films of thicknesses ranging from 100 to 600 nm, by Pulsed Laser Deposition (PLD), on SiO2/Si substrates. The deposition rates varied from 6 x 10(-3) to 0.08 nm/pulse depending on the conditions employed. XPS measurements show that all elements are transferred from the target to the substrate and that the thin film composition is very close to that of the target, Film morphology depends upon the laser energy density at the target, Films deposited at about 2 J/cm(2) show a rough surface and a columnar structure. At lower energy density (400 mJ/cm(2)), a smoother surface is obtained. Electrical measurements show good ionic conductivity, and that the films are suitable for the fabrication of electrochemical gas sensors.

引用

页码：855 / 858

页数：4