Even-odd effect in Andreev transport through a carbon nanotube quantum dot

被引:130
作者
Eichler, A.
Weiss, M.
Oberholzer, S.
Schoenenberger, C.
Levy Yeyati, A.
Cuevas, J. C.
Martin-Rodero, A.
机构
[1] Univ Basel, Inst Phys, CH-4056 Basel, Switzerland
[2] Univ Autonoma Madrid, Dept Fis Teor Mat Condensada, E-28049 Madrid, Spain
关键词
D O I
10.1103/PhysRevLett.99.126602
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We have measured the current (I)-voltage (V) characteristics of a single-wall carbon nanotube quantum dot coupled to superconducting source and drain contacts in the intermediate coupling regime. Whereas the enhanced differential conductance dI/dV due to the Kondo resonance is observed in the normal state, this feature around zero-bias voltage is absent in the superconducting state. Nonetheless, a pronounced even-odd effect appears at finite bias in the dI/dV subgap structure caused by Andreev reflection. The first-order Andreev peak appearing around V=Delta/e is markedly enhanced in gate-voltage regions, in which the charge state of the quantum dot is odd. This enhancement is explained by a "hidden" Kondo resonance, pinned to one contact only. A comparison with a single-impurity Anderson model, which is solved numerically in a slave-boson mean-field approach, yields good agreement with the experiment.
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页数:4
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