Preparation of hydrogenated amorphous silicon carbide thin films by plasma enhanced chemical vapour deposition

被引：6

作者：

Huran, J

Safrankova, J

Kobzev, AP

机构：

[1] Slovak Acad Sci, Inst Elect Engn, SK-84239 Bratislava, Slovakia

[2] Joint Inst Nucl Res, Dubna 141980, Moscow Region, Russia

来源：

VACUUM | 1998年 / 50卷 / 1-2期

关键词：

D O I：

10.1016/S0042-207X(98)00031-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin silicon carbide (SiC) films were prepared by plasma enhanced chemical vapour deposition (PECVD). The structural properties of SiC films were investigated by IR, RES, and ERD measurement techniques. The results showed that the films contain the typical features found in hydrogenated amorphous SIG. The I-U measurements were used to electrical characterization of Au Schottky contacts prepared on SiC surfaces. (C) 1998 Elsevier Science Ltd. All rights reserved.

引用

页码：103 / 105

页数：3