Carrier plasma shift in GaInAsP photonic crystal point defect cavity

被引:19
作者
Baba, T
Shiga, M
Inoshita, K
Koyama, F
机构
[1] Yokohama Natl Univ, Dept Elect & Comp Engn, Yokohama, Kanagawa 2408501, Japan
[2] Tokyo Inst Technol, P&I Lab, Yokohama, Kanagawa 2268503, Japan
关键词
D O I
10.1049/el:20030930
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A 1.43-mum-GaInAsP photonic crystal slab with a point defect cavity and line defect waveguides has been fabricated. A similar to1.5 mum-wavelength light is inserted into the waveguide and the cavity resonant spectrum observed. A 5.6 nm blue shift in the resonant peak arising from the carrier plasma effect by photopumping is also observed. These results will be applicable to all-optical switches and tunable devices.
引用
收藏
页码:1516 / 1518
页数:3
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