Carrier plasma shift in GaInAsP photonic crystal point defect cavity

被引：19

作者：

Baba, T

Shiga, M

Inoshita, K

Koyama, F

机构：

[1] Yokohama Natl Univ, Dept Elect & Comp Engn, Yokohama, Kanagawa 2408501, Japan

[2] Tokyo Inst Technol, P&I Lab, Yokohama, Kanagawa 2268503, Japan

来源：

ELECTRONICS LETTERS | 2003年 / 39卷 / 21期

关键词：

D O I：

10.1049/el:20030930

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 1.43-mum-GaInAsP photonic crystal slab with a point defect cavity and line defect waveguides has been fabricated. A similar to1.5 mum-wavelength light is inserted into the waveguide and the cavity resonant spectrum observed. A 5.6 nm blue shift in the resonant peak arising from the carrier plasma effect by photopumping is also observed. These results will be applicable to all-optical switches and tunable devices.

引用

收藏

页码：1516 / 1518

页数：3

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