TEM and HREM study of high-temperature aluminum ion implantation to 6H-SiC

被引：3

作者：

Suvorova, AA ^{[1
]}

Usov, IO ^{[1
]}

Lebedev, OI ^{[1
]}

Van Tendeloo, G ^{[1
]}

Suvorov, AV ^{[1
]}

机构：

[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

WIDE-BANDGAP SEMICONDUCTORS FOR HIGH POWER, HIGH FREQUENCY AND HIGH TEMPERATURE | 1998年 / 512卷

关键词：

D O I：

10.1557/PROC-512-481

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

6H silicon carbide wafers were implanted with 40-50 keV aluminum ions to a dose of 1.5 x 10(14) - 1.5 x 10(16) cm(-2) at high temperatures (1100 degrees C-1700 degrees C). The substrate temperature and the implantation dose were varied to investigate the influence of the implantation parameters on the formation of structural defects. Conventional transmission electron microscopy (TEM) and high resolution electron microscopy (HREM) techniques were applied to study the defects. We found that for low dose implants {0001} interstitial dislocation loops are formed but for high dose implants aluminum precipitates associated with {0001} half-loops are formed.

引用

页码：481 / 486

页数：6