Photovoltaic properties of Schottky and p-n type solar cells based on polythiophene

被引:39
作者
Sicot, L [1 ]
Geffroy, B [1 ]
Lorin, A [1 ]
Raimond, P [1 ]
Sentein, C [1 ]
Nunzi, JM [1 ]
机构
[1] CEA Saclay, Lab Composants Organ, DRT,LIST, DECS,SE2M, Batiment 451, F-91191 Gif Sur Yvette, France
关键词
D O I
10.1063/1.1378064
中图分类号
O59 [应用物理学];
学科分类号
摘要
The electrical and photovoltaic properties of organic Schottky and p-n type cells have been studied. Schottky devices are based on a spin-coated film of poly(3-butylthiophene) blend with the dye 1,3-bis-(dicyanomethylidene)-2-(4-dibutylaminobenzylidene)indane which is sandwiched between indium tin oxide (ITO) and gold electrodes. A depletion zone of 9.5 nm thick has been determined on a 220-nm-thick film. The conversion efficiency is equal to 0.01% under 100 mW cm(-2) white light illumination. Effects of dye loading, film thickness, and light intensity are described. A model based on simple assumptions is used to fit the photoaction spectra. By evaporation under vacuum of a layer of N,N-'-dimethyl-3,4,9,10-perylenetetracarboxylic diimide between the ITO and the polymer film, we have fabricated hybrid polymer-molecular p-n type photovoltaic cells. The role of this molecule in the photogeneration has been studied. A constant power conversion efficiency of 0.15% has been measured under white light illumination between 0.2 and 200 mW cm(-2). (C) 2001 American Institute of Physics.
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页码:1047 / 1054
页数:8
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