Theoretical study of RF-breakdown in bulk GaN and GaN MESFETs

被引：4

作者：

Farahmand, M ^{[1
]}

Brennan, KF

Gebara, E

Heo, D

Suh, Y

Laskar, J

机构：

[1] Movaz Networks, Atlanta, GA 30092 USA

[2] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2001年 / 48卷 / 09期

基金：

美国国家科学基金会;

关键词：

breakdown in GaN; impact ionization; RF breakdown;

D O I：

10.1109/16.944168

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

RF-breakdown was studied in bulk GaN and in GaN MESFETs using a full band Monte Carlo simulator. It was found that in bulk materials, increasing the frequency of an applied PF field would result in a lower overall impact ionization rate and consequently lead to higher breakdown fields. It was also found that the RF-breakdown voltage of devices increases with increasing frequency of the applied large signal RF excitation. The frequency dependence of RF-breakdown and the difference between RF and de-breakdown is explained based on the time response of the particle energy to the change in the applied RF excitation.

引用

页码：1844 / 1849

页数：6

共 19 条

[1] Materials theory based modeling of wide band gap semiconductors: from basic properties to devices [J].