Junction properties of metal/polypyrrole Schottky barriers

被引:63
作者
Abthagir, PS [1 ]
Saraswathi, R [1 ]
机构
[1] Madurai Kamaraj Univ, Dept Mat Sci, Madurai 625021, Tamil Nadu, India
关键词
polypyrrole; Schottky diode; junction properties; ternary eutectic melt;
D O I
10.1002/app.1648
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
Schottky barriers of the type Au/polypyrrole/Al (or In) were made in sandwich configuration. The conductivity of polypyrrole was tuned to be on the order of 10(-3) ohm(-1) cm(-1) by its electrodeposition from a novel ambient temperature ternary eutectic melt consisting of acetamide, urea, and ammonium nitrate. The rectification characteristics were obtained from the current-voltage and capacitance-voltage measurements at room temperature. The analysis of data using thermionic emission theory gave improved values for the junction parameters of ideality factor, reverse saturation current, rectification ratio, and barrier potential when compared to the previously reported values for this polymer. Between Al and In metals used for the junction formation, the diode formed with Al metal is found to show better performance. The energy gap and work function of polypyrrole were also estimated. (C) 2001 John Wiley & Sons, Inc.
引用
收藏
页码:2127 / 2135
页数:9
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