Magnetic properties of rare-earth-doped GaN

被引：9

作者：

Bang, H ^{[1
]}

Sawahata, J ^{[1
]}

Piao, G ^{[1
]}

Tsunemi, M ^{[1
]}

Yanagihara, H ^{[1
]}

Kita, E ^{[1
]}

Akimoto, K ^{[1
]}

机构：

[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

来源：

5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS | 2003年 / 0卷 / 07期

关键词：

D O I：

10.1002/pssc.200303486

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Magnetic properties of Er-doped GaN and Th-doped GaN films grown by molecular beam epitaxy (MBE) on sapphire substrates (0001) were studied. Magnetization measurements were carried out under magnetic fields ranging from -5 to 5 T, and both samples were reasonably interpreted to exhibit a predominant paramagnetic character. However, for Er-doped GaN, clear finite steps around zero fields were observed throughout the temperature range of 5 K to 300 K, suggesting the coexistence of ferromagnetic order. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2874 / 2877

页数：4

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