Alignment-free top-contact formation for organic thin film transistors with submicron-length channel

被引:7
作者
Yagi, I
Shigeto, K
Tsukagoshi, K
Aoyagi, Y
机构
[1] RIKEN, Wako, Saitama 3510198, Japan
[2] JST, PRESTO, Kawaguchi, Saitama 3320012, Japan
[3] Tokyo Inst Technol, Dept Informat Proc, Yokohama, Kanagawa 2268502, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2005年 / 44卷 / 16-19期
关键词
organic thin film transistor; pentacene; top-contact; alignment-free fabrication; submicron-length channel;
D O I
10.1143/JJAP.44.L479
中图分类号
O59 [应用物理学];
学科分类号
摘要
We propose a simple fabrication method for self-aligned top contacts for an organic thin film transistor (TFT) that can be miniaturized. The self-aligned top electrodes are formed without any break in the vacuum condition after the formation of an organic channel on the substrate with a prefabricated insulating structure. As a demonstration of this method, pentacene TFTs with submicron-length channels have been fabricated and Successfully operated. Scanning electron microscopy of TFTs reveals well-defined TFT structures as expected.
引用
收藏
页码:L479 / L481
页数:3
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