Epitaxial MnO thin films grown by pulsed laser deposition

被引:40
作者
Neubeck, W
Ranno, L
Hunt, MB
Vettier, C
Givord, D
机构
[1] European Synchrotron Radiat Facil, F-38043 Grenoble, France
[2] Univ Grenoble 1, CNRS, Lab Louis Neel, F-38042 Grenoble, France
关键词
manganese oxide; laser ablation; thin films; characterisation; synchrotron;
D O I
10.1016/S0169-4332(98)00421-8
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
By using pulsed laser deposition under vacuum from Mn(2)O(3) targets epitaxial MnO thin films have been grown. The substrates used were sapphire [001] and MgO [111]. Best results were achieved at a pressure of 10(-4) mbar and at substrate temperatures of 700 degrees C, The films were characterised by using grazing incidence X-ray scattering as well as theta-2 theta Bragg scattering. Part of the characterisation was done with synchrotron radiation at beamline ID20 of the ESRF/Grenoble. The films show lattice parameters close to the bulk ones. The growth direction was found to be [111]. RES measurements were used to check interdiffusion and film thickness. Typical film thicknesses were from 200 Angstrom up to 3500 Angstrom. These films have been studied by magnetic X-ray scattering experiments at the ESRF, They exhibit antiferromagnetic long range order similar to bulk crystals. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:195 / 198
页数:4
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