Hydrogen retention properties of SiC converted graphite

被引：10

作者：

Yamauchi, Y ^{[1
]}

Hino, T ^{[1
]}

Hirohata, Y ^{[1
]}

Yamashina, T ^{[1
]}

机构：

[1] NATL INST FUS SCI,CHIKUSA KU,NAGOYA,AICHI 464,JAPAN

来源：

VACUUM | 1996年 / 47卷 / 6-8期

关键词：

plasma facing material; SiC; hydrogen retention; helium ion bombardment;

D O I：

10.1016/0042-207X(96)00105-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The hydrogen retention properties of SiC converted graphite were investigated by using a technique of thermal desorption spectroscopy, following the hydrogen ion irradiation in ECR ion apparatus. The H-2 desorption spectrum had two peaks at 600 and 800 degrees C, due to the detrappings of Si-H and C-H bondings, respectively The amount of retained hydrogen in SiC converted graphite at RT was smaller than that of isotropic graphite or B4C converted graphite. The annealing temperature required for the hydrogen retention of SiC converted graphite to be decreased to a half value was 100 degrees C lower than that of the isotropic graphite. In order to reduce the hydrogen retention, the helium ion irradiation was carried out for the SiC converted graphite. The ratio of the reduction amount, however, was smaller than that for the case of isotropic graphite or B4C converted graphite. Copyright (C) 1996 Elsevier Science Ltd.

引用

页码：973 / 975

页数：3

共 21 条

[1] REEMISSION OF DEUTERIUM FROM GRAPHITE AS A FUNCTION OF D+ FLUX-DENSITY [J].