Nonlinear electron transport characteristics in ultrathin wires of recrystallized hydrogenated amorphous silicon

被引:15
作者
Ng, V
Ahmed, H
Shimada, T
机构
[1] Univ Cambridge, Cavendish Lab, Microelect Res Ctr, Cambridge CB3 0HE, England
[2] Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 185, Japan
[3] Natl Univ Singapore, Dept Elect Engn, Singapore 119260, Singapore
关键词
D O I
10.1063/1.122056
中图分类号
O59 [应用物理学];
学科分类号
摘要
Electron transport in nanowires of hydrogenated amorphous silicon recrystallized by electron beam annealing has been studied. Evidence for single electron effects with I-V characteristics at low temperature has been presented. The region of the nonlinear I-V characteristics is modeled as a hopping conduction between limited number of trapping sites in amorphous regions or at grain boundaries with Coulomb blockade effect. Transmission electron microscopy is used to support this hypothesis. (C) 1998 American Institute of Physics.
引用
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页码:972 / 974
页数:3
相关论文
共 4 条
[1]   COULOMB-BLOCKADE IN A SILICON TUNNEL JUNCTION DEVICE [J].
ALI, D ;
AHMED, H .
APPLIED PHYSICS LETTERS, 1994, 64 (16) :2119-2120
[2]   Gate controlled Coulomb blockade effects in the conduction of a silicon quantum wire [J].
Smith, RA ;
Ahmed, H .
JOURNAL OF APPLIED PHYSICS, 1997, 81 (06) :2699-2703
[3]   TRANSIENT AND STEADY-STATE OPTOELECTRONIC PROPERTIES OF MU-C-SI-H [J].
WANG, F ;
LIU, HN ;
HE, YL ;
SCHWEIGER, A ;
SCHWARZ, R .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1991, 137 :511-514
[4]  
YNAO K, 1993, IEDM