The effect of offset charge deposited directly onto single-electron devices

被引：4

作者：

Graham, MR ^{[1
]}

Ahmed, H ^{[1
]}

机构：

[1] Univ Cambridge, Cavendish Lab, Microelect Res Ctr, Cambridge CB3 0HE, England

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 25期

关键词：

D O I：

10.1063/1.121600

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of charge deposited directly in the vicinity of a multiple tunnel junction single-electron transistor have been investigated. Two regimes of offset effects have been observed with a continuous transition between them. The deposited charge causes the device current to oscillate in a manner analogous to sweeping the gate voltage, and an equivalence between the two phenomena has been demonstrated. In addition, ions landing very close to the device cause a discontinuous change in the device current such that the arrival of individual ions can be time resolved. (C) 1998 American Institute of Physics. [S0003-6951(98)04425-8].

引用

页码：3350 / 3352

页数：3

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