Effect of a tilted magnetic field on the anomalous H=0 conducting phase in high-mobility Si MOSFET's

The suppression by a magnetic field of the anomalous H=0 conducting phase in high-mobility silicon metal-oxide-semiconductor field-effect transistors is independent of the angle between the field and the plane of the two-dimensional electron system. In the presence of a parallel field large enough to fully quench the anomalous conducting phase, the behavior is similar to that of disordered GaAs/AlxGa1-xAs heterostructures: the system is insulating in zero (perpendicular) field, and exhibits reentrant insulator-quantum-Hall-effect-insulator transitions as a function of perpendicular field. The results demonstrate that the suppression of the low-T phase is related only to the electrons' spin.