Iridium oxide as a stimulating neural electrode formed by reactive magnetron sputtering

被引：6

作者：

Lee, IS ^{[1
]}

Park, JM

Son, HJ

Park, JC

Lee, GH

Lee, YH

Ciu, FZ

机构：

[1] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea

[2] Yonsei Univ, Yonsei Ctr Nano Technol, Seoul 120749, South Korea

[3] Yonsei Univ, Coll Med, Dept Med Engn, Seoul 120752, South Korea

[4] Korea Inst Machinery & Mat, Chang Won 641010, South Korea

[5] Yonsei Univ, Wonju Coll Med, Dept Rehabil Med, Kangwon Do 220701, South Korea

[6] Tsinghua Univ, Dept Mat Sci & Engn, Beijing 100084, Peoples R China

来源：

ASBM6: ADVANCED BIOMATERIALS VI | 2005年 / 288-289卷

关键词：

iridium oxide; charge injection; neural electrode; reactive sputtering; stimulation;

D O I：

10.4028/www.scientific.net/KEM.288-289.307

中图分类号：

R318 [生物医学工程];

学科分类号：

0831 ;

摘要：

Implantable neural prostheses form hybrid interfaces with biological constructs, and the application of electrical fields can restore functions of patients with neurological damages. The various stoichiometric compositions of iridium. oxide were synthesized using reactive magnetron sputtering. The charge injection behavior of iridium oxide deposited with an O-2/Ar ratio of 0.5 was similar to pure In The charge density of iridium oxide increased with increasing O-2/Ar ratio, and increasing thickness of iridium. oxide.

引用

页码：307 / 310

页数：4

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