Device implications of spin-transfer torques

被引：341

作者：

Katine, J. A. ^{[3
]}

Fullerton, Eric E. ^{[1
,2
]}

机构：

[1] Univ Calif San Diego, Ctr Magnet Recording Res, La Jolla, CA 92093 USA

[2] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA

[3] Hitachi Global Storage Technol, San Jose, CA 95135 USA

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2008年 / 320卷 / 07期

关键词：

GMR; TMR; MRAM; magnetic recording; spin transfer; oscillators;

D O I：

10.1016/j.jmmm.2007.12.013

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This article examines spin-transfer torques from the perspective of three technological applications: hard disk drives, magnetic random access memory (MRAM), and current-tunable high-frequency oscillators. In hard disk drives, spin-transfer torques are a source of noise, and we discuss the implications spin-transfer noise will have on future sensor designs. For MRAM, we evaluate the feasibility of spin-transfer-driven switching. Finally, we discuss the possibility of GHz communication applications enabled by nanoscale spin-transfer oscillators. (c) 2007 Elsevier B. V. All rights reserved.

引用

页码：1217 / 1226

页数：10

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