Weak localisation in bilayer graphene

被引：8

作者：

Gorbachev, R. V. ^{[1
]}

Tikhonenko, F. V. ^{[1
]}

Mayorov, A. S. ^{[1
]}

Horsell, D. W. ^{[1
]}

Savchenko, A. K. ^{[1
]}

机构：

[1] Univ Exeter, Sch Phys, Exeter EX4 4QL, Devon, England

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2008年 / 40卷 / 05期

基金：

英国工程与自然科学研究理事会;

关键词：

weak localisation; magnetoconductance; bilayer systems; graphene;

D O I：

10.1016/j.physe.2007.09.009

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report the first experimental study of the quantum interference correction to the conductivity of bilayer graphene. Low-field, positive magnetoconductivity due to the weak localisation effect is investigated at different carrier densities, including those around the electroneutrality region. Unlike conventional 2D systems, weak localisation in bilayer graphene is affected by elastic scattering processes such as intervalley scattering. Analysis of the dephasing determined from the magnetoconductivity is complemented by a study of the field- and density-dependent fluctuations of the conductance. Good agreement in the value of the coherence length is found between these two studies. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：1360 / 1363

页数：4

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