Design of orientation stages for step and flash imprint lithography

被引:102
作者
Choi, BJ
Sreenivasan, SV [1 ]
Johnson, S
Colburn, M
Wilson, CG
机构
[1] Univ Texas, Dept Engn Mech, Austin, TX 78712 USA
[2] Univ Texas, Dept Chem Engn, Austin, TX 78712 USA
来源
PRECISION ENGINEERING-JOURNAL OF THE INTERNATIONAL SOCIETIES FOR PRECISION ENGINEERING AND NANOTECHNOLOGY | 2001年 / 25卷 / 03期
关键词
template-wafer alignment; template stage; flexure mechanism; Step and Flash Imprint Lithography;
D O I
10.1016/S0141-6359(01)00068-X
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This paper presents the design of orientation stages for high-resolution imprint lithography machines. These machines implement a new lithography process known as Step and Flash Imprint Lithography (SFIL) and are intended for 1) sub 100 nm imprint demonstrations on Rat substrates and 2) investigation of potential defect propagation during step and repeat imprinting. SFIL is an imprint lithography process that is a combination of chemical and mechanical steps and its implementation at room temperature and low pressure makes it an attractive process as compared to other imprint techniques, A critical component of an imprint machine is the orientation stage that is required to provide uniform intimate contact between the template and substrate surfaces. The orientation stage requirements are distinct from those used in photolithography since the depth of focus of projection optics allows for larger errors in the orientation alignment. Also, due to contact between the template and substrate surfaces in imprint lithography. the separation kinematics must be carefully controlled in the SFIL process. Two different orientation stages are designed for single- and multi-imprint machines. In order to eliminate the particle contamination due to frictional contacts. all joints are made with flexure joints. Imprint experiments have been performed to demonstrate sub 100 nm imprints. (C) 2001 Elsevier Science Inc. All rights reserved.
引用
收藏
页码:192 / 199
页数:8
相关论文
共 13 条
[1]  
BADAMI VG, 1996, P ASPE 1996 ANN M, P391
[2]   Nanoimprint lithography [J].
Chou, SY ;
Krauss, PR ;
Renstrom, PJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (06) :4129-4133
[3]  
COLBURN M, 1999, SPIE 24 ANN INT S MI
[4]   Mold-assisted nanolithography: A process for reliable pattern replication [J].
Haisma, J ;
Verheijen, M ;
vandenHeuvel, K ;
vandenBerg, J .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (06) :4124-4128
[5]  
JOHNSON S, 1999, THESIS U TEXAS AUSTI
[6]  
PAROS JM, 1998, MACH DES, P151
[7]  
RUCHHOEFT P, 1999, J VAS SCI TECHNO NOV
[8]  
Smith S. T., 1992, FDN ULTRAPRECISION M
[9]   HIGH-PRECISION MOTION AND ALIGNMENT IN AN ION-BEAM PROXIMITY PRINTING SYSTEM [J].
STUMBO, DP ;
DAMM, GA ;
SEN, S ;
ENGLER, DW ;
FONG, FO ;
WOLFE, JC ;
ORO, JA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (06) :3597-3600
[10]  
WANG D, 1997, APPL PHYS LETT, V70, P12