Electrical properties of InGaN-Si heterojunctions

被引：24

作者：

Ager, Joel W., III ^{[1
]}

Reichertz, Lothar A. ^{[1
]}

Cui, Yi ^{[1
]}

Romanyuk, Yaroslav E. ^{[1
]}

Kreier, Daniel ^{[1
]}

Leone, Stephen R. ^{[1
]}

Yu, Kin Man ^{[1
]}

Schaff, William J.

Walukiewicz, Wladyslaw ^{[1
]}

机构：

[1] Univ Calif Berkeley, Lawrence Berkeley Lab, 1 Cyclotron Rd, Berkeley, CA 94720 USA

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2 | 2009年 / 6卷

关键词：

MOLECULAR-BEAM EPITAXY; LIGHT-EMITTING-DIODES; ALN BUFFER LAYER; GAN; SI(111); INN; SILICON; PHOTOLUMINESCENCE; ULTRAVIOLET; SUBSTRATE;

D O I：

10.1002/pssc.200880967

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The electrical transport properties of n-InxGa1-xN heterojunctions with Si(111) were investigated. InGaN films were grown by molecular beam epitaxy and either an AlN or Si3N4 buffer layer was used. For x in the range of 15-45%, an ohmic junction is obtained with p-type Si and a rectifying junction is formed with n-type Si. The n-InGaN/n-Si heterojunction device functions as a solar cell. The series resistance is lower and the power conversion efficiency is higher for InGaN devices grown with an AlN buffer layer. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：S413 / S416

页数：4

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