Effect of Ti substitution on the thermoelectric properties of (Zr,Hf)NiSn half-Heusler compounds

被引：498

作者：

Sakurada, S ^{[1
]}

Shutoh, N ^{[1
]}

机构：

[1] Toshiba Co Ltd, Corp Res & Dev Ctr, Saiwai Ku, Kanagawa 2128582, Japan

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 08期

关键词：

D O I：

10.1063/1.1868063

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of Ti substitution on the thermoelectric properties of (Zr,Hf)NiSn half-Heusler compounds was studied. It was found that the substitution of Ti for (Zr,Hf) reduced the thermal conductivity significantly to a low value of 3.0 W/mK at room temperature. In addition, a remarkable enhancement of the Seebeck coefficient due to Ti substitution was observed. Furthermore, doping of the Sn sites in (Ti,Zr,Hf)NiSn with Sb led to a reduction in the electrical resistivity and to a corresponding enhancement of the power factor. In Sb-doped (Ti,Zr,Hf)NiSn compounds, the dimensionless figure of merit, ZT, increased with the increase in temperature and reached a high maximum value of 1.5 at 700 K. (c) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

共 9 条

[1] NARROW-BAND IN THE INTERMETALLIC COMPOUNDS TINISN, ZRNISN, HFNISN [J].

ALIEV, FG ;

KOZYRKOV, VV ;

MOSHCHALKOV, VV ;

SCOLOZDRA, RV ;

DURCZEWSKI, K .

ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1990, 80 (03) :353-357

[2] GAP AT THE FERMI LEVEL IN THE INTERMETALLIC VACANCY SYSTEM TINISN, ZRNISN, HFNISN [J].

ALIEV, FG ;

BRANDT, NB ;

MOSHCHALKOV, VV ;

KOZYRKOV, VV ;

SKOLOZDRA, RV ;

BELOGOROKHOV, AI .

ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1989, 75 (02) :167-171

[3] TiNiSn: A gateway to the (1,1,1) intermetallic compounds [J].

Cook, BA ;

Harringa, JL ;

Tan, ZS ;

Jesser, WA .

PROCEEDINGS ICT '96 - FIFTEENTH INTERNATIONAL CONFERENCE ON THERMOELECTRICS, 1996, :122-127

[4] A new class of materials with promising thermoelectric properties: MNiSn (M = Ti, Zr, Hf) [J].

Hohl, H ;

Ramirez, AP ;

Kaefer, W ;

Fess, K ;

Thurner, C ;

Kloc, C ;

Bucher, E .

THERMOELECTRIC MATERIALS - NEW DIRECTIONS AND APPROACHES, 1997, 478 :109-114

[5] Efficient dopants for ZrNiSn-based thermoelectric materials [J].

Hohl, H ;

Ramirez, AP ;

Goldmann, C ;

Ernst, G ;

Wölfing, B ;

Bucher, E .

JOURNAL OF PHYSICS-CONDENSED MATTER, 1999, 11 (07) :1697-1709

[6]

JEITSCHKO W, 1970, METALL TRANS, V1, P3159

[7] BAND-GAP AND STABILITY IN THE TERNARY INTERMETALLIC COMPOUNDS NISNM (M=TI,ZR,HF) - A FIRST-PRINCIPLES STUDY [J].

OGUT, S ;

RABE, KM .

PHYSICAL REVIEW B, 1995, 51 (16) :10443-10453

[8] Effects of partial substitution of Ni by Pd on the thermoelectric properties of ZrNiSn-based half-Heusler compounds [J].

Shen, Q ;

Chen, L ;

Goto, T ;

Hirai, T ;

Yang, J ;

Meisner, GP ;

Uher, C .

APPLIED PHYSICS LETTERS, 2001, 79 (25) :4165-4167

[9] Transport properties of pure and doped MNiSn (M=Zr, Hf) [J].

Uher, C ;

Yang, J ;

Hu, S ;

Morelli, DT ;

Meisner, GP .

PHYSICAL REVIEW B, 1999, 59 (13) :8615-8621

← 1 →