Magnetophonon and magneto-intersubband-scattering effects in InAs/AlGaSb heterostructures

被引:1
作者
Osako, S
Hamano, T
Mori, N
Hamaguchi, C
Sasa, S
Inoue, M
机构
[1] Osaka Univ, Dept Elect Engn, Suita, Osaka 565, Japan
[2] Osaka Inst Technol, Dept Elect Engn, Asahi Ku, Osaka 535, Japan
关键词
magnetophonon resonance; heterostructures; InAs/AlGaSb;
D O I
10.1016/S0921-4526(98)00304-4
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Magnetoresistance of a two-dimensional electron gas in InAs/AlGaSb quantum wells with high and low carrier concentrations was measured for a wide range of temperatures. At high temperatures, a weak oscillation of the magnetoresistance with a fundamental field of B-0 approximate to 6.3 T was observed in the low carrier concentration samples, which is attributed to the magnetophonon resonances, while a combined oscillation of the magnetoresistance due to the magnetophonon and the magneto-intersubband-scattering effects was clearly observed in the high carrier concentration samples. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:740 / 744
页数:5
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