Suppression of penetration of aluminum into 8-hydroxyquinoline aluminum via a thin oxide barrier

被引：28

作者：

Huang, MB ^{[1
]}

McDonald, K

Keay, JC

Wang, YQ

Rosenthal, SJ

Weller, RA

Feldman, LC

机构：

[1] Vanderbilt Univ, Dept Phys & Astron, Nashville, TN 37235 USA

[2] Vanderbilt Univ, Dept Chem, Nashville, TN 37235 USA

[3] Vanderbilt Univ, Dept Elect & Comp Engn, Nashville, TN 37235 USA

[4] Vanderbilt Univ, Dept Phys & Astron, Nashville, TN 37235 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 20期

关键词：

D O I：

10.1063/1.122628

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a direct observation of Al penetration into an organic film of 8-hydroxyquinoline aluminum (Alq) in a Alq/Al bilayer, a common interface occurring in many organic light-emitting diode structures. The Al penetration has a strong correlation with Alq photoluminescence quenching. We also demonstrate that the penetration and luminescence quenching can be effectively suppressed by similar to 20 Angstrom of an intervening layer of Al2O3 at the Alq/Al interface. (C) 1998 American Institute of Physics. [S0003-6951(98)02346-8].

引用

页码：2914 / 2916

页数：3

共 18 条

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