Contact resistance measurement of bonded copper interconnects for three-dimensional integration technology

被引：76

作者：

Chen, KN ^{[1
]}

Fan, A ^{[1
]}

Tan, CS ^{[1
]}

Reif, R ^{[1
]}

机构：

[1] MIT, Microsyst Technol Labs, Cambridge, MA 02139 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2004年 / 25卷 / 01期

关键词：

3-D integration technology; bonded interconnects; contact resistance; copper wafer bonding;

D O I：

10.1109/LED.2003.821591

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel test structure for contact resistance measurement of bonded copper interconnects in three-dimensional integration technology is proposed and fabricated. This test structure requires a simple fabrication process and eliminates the Possibility of measurement errors due to misalignment during bonding. Specific contact resistances of bonding interfaces with different interconnect sizes of approximately 10(-8) Omega-cm(2) are measured. A reduction in specific contact resistance is obtained by longer anneal time. The specific contact resistance of bonded interconnects with longer anneal time does not change with interconnect sizes.

引用

页码：10 / 12

页数：3

共 10 条

[1] 3-D ICs: A novel chip design for improving deep-submicrometer interconnect performance and systems-on-chip integration
Banerjee, K
Souri, SJ
Kapur, P
Saraswat, KC
[J]. PROCEEDINGS OF THE IEEE, 2001, 89 (05) : 602 - 633
[2] BRANDES EA, 1998, SMITHELLS METALS REF, P10
[3] Microstructure evolution and abnormal grain growth during copper wafer bonding
Chen, KN
Fan, A
Tan, CS
Reif, R
Wen, CY
[J]. APPLIED PHYSICS LETTERS, 2002, 81 (20) : 3774 - 3776
[4] Microstructure examination of copper wafer bonding
Chen, KN
Fan, A
Reif, R
[J]. JOURNAL OF ELECTRONIC MATERIALS, 2001, 30 (04) : 331 - 335
[5] Surgical management of hallux valgus deformity in children with cerebral palsy
Davids, JR
Mason, TA
Danko, A
Banks, D
Blackhurst, D
[J]. JOURNAL OF PEDIATRIC ORTHOPAEDICS, 2001, 21 (01) : 89 - 94
[6] Copper wafer bonding
Fan, A
Rahman, A
Reif, R
[J]. ELECTROCHEMICAL AND SOLID STATE LETTERS, 1999, 2 (10) : 534 - 536
[7] FAN A, P ELECTROCHEMICAL SO, P124
[8] RABAEY J, 1996, DIGITAL INTEGRATED C, P465
[9] SCHRODER D, 1990, SEMICONDUCTOR MAT DE, P121
[10] Schwartz GC, 1998, HDB SEMICONDUCTOR IN, P187

← 1 →