Experimental studies and computer simulation of the preparation of nanoporous silicon-carbide membranes by chemical-vapor infiltration/chemical-vapor deposition techniques

被引：21

作者：

Chen, Feng ^{[1
]}

Mourhatch, Rayan ^{[1
]}

Tsotsis, Theodore T. ^{[1
]}

Sahimi, Muhammad ^{[1
]}

机构：

[1] Univ So Calif, Mork Family Dept Chem Engn & Mat Sci, Los Angeles, CA 90089 USA

来源：

CHEMICAL ENGINEERING SCIENCE | 2008年 / 63卷 / 06期

基金：

美国国家科学基金会;

关键词：

nanoporous membranes; knudsen diffusion; hindered diffusion; chemical-vapor deposition; chemical-vapor infiltration; numerical simulation;

D O I：

10.1016/j.ces.2007.12.001

中图分类号：

TQ [化学工业];

学科分类号：

0817 ;

摘要：

Preparation of asymmetric nanoporous silicon-carbide membranes using chemical-vapor infiltration/chemical-vapor deposition (CVI/CVD) is described. We use macroporous SiC disks and tubes as supports, and tri-isopropylsilane as the precursor. Experimental data for the permeation and selectivity of the membranes are presented. We also develop two dynamic models to describe the preparation of the membranes. The models are shown to provide accurate predictions for the experimental data for the permeation characteristics of the membranes, as a function of the preparation conditions. (C) 2007 Elsevier Ltd. All rights reserved.

引用

页码：1460 / 1470

页数：11

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