Surface pre-melting and surface flattening of Bi nanofilms on Si(111)-7x7

被引:39
作者
Yaginuma, S
Nagao, T [1 ]
Sadowski, JT
Pucci, A
Fujikawa, Y
Sakurai, T
机构
[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
[2] Univ Heidelberg, Kirchhoff Inst Phys, D-69120 Heidelberg, Germany
关键词
surface melting; surface structure; morphology; roughness; and topography; surface thermodynamics (including phase; transitions); low energy electron diffraction (LEED); metallic films; bismuth;
D O I
10.1016/j.susc.2003.10.015
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We report on the in situ observation of temperature-driven drastic morphology evolution and surface pre-melting of the Bi(0 0 1) nanofilm deposited on the Si(1 1 1)-7 x 7 surface by use of spot-profile-analyzing low-energy electron diffraction (SPA-LEED). Surface step density of the single-crystalline, epitaxial Bi(0 0 1) film decreases above 350 K in a critical manner. On annealed Bi(0 0 1) films, we have detected surface pre-melting with a transition temperature of 350 K, which yields reversible diffraction intensity drop in addition to the harmonic Debye-Waller behavior. The observed surface flattening of the as-deposited film is driven by the increased amount of mobile adatoms created through the surface pre-melting. (C) 2003 Published by Elsevier B.V.
引用
收藏
页码:L877 / L881
页数:5
相关论文
共 16 条
[1]   Electronic structure of a bismuth bilayer -: art. no. 113102 [J].
Ast, CR ;
Höchst, H .
PHYSICAL REVIEW B, 2003, 67 (11) :4
[2]   Fermi surface of Bi(111) measured by photoemission spectroscopy -: art. no. 177602 [J].
Ast, CR ;
Höchst, H .
PHYSICAL REVIEW LETTERS, 2001, 87 (17) :177602-177602
[3]   APPROACH TO THERMAL ROUGHENING OF NI(110) - A STUDY BY HIGH-RESOLUTION LOW-ENERGY ELECTRON-DIFFRACTION [J].
CAO, YJ ;
CONRAD, EH .
PHYSICAL REVIEW LETTERS, 1990, 64 (04) :447-450
[4]  
Kittel C., 1996, Introduction to Solid State Physics, V7th, P126
[5]   Epitaxial growth of single-crystal ultrathin films of bismuth on Si(111) [J].
Nagao, T ;
Doi, T ;
Sekiguchi, T ;
Hasegawa, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (7B) :4567-4570
[6]  
NAGAO T, UNPUB PHYS REV LETT
[7]   THERMAL DISORDERING OF THE AL(110) SURFACE [J].
PAVLOVSKA, A ;
TIKHOV, M ;
GU, YJ ;
BAUER, E .
SURFACE SCIENCE, 1992, 278 (03) :303-316
[8]   ANISOTROPY OF THE ORDER-DISORDER PHASE-TRANSITION ON THE PB(110) SURFACE [J].
PRINCE, KC ;
BREUER, U ;
BONZEL, HP .
PHYSICAL REVIEW LETTERS, 1988, 60 (12) :1146-1149
[9]   Melting and freezing at surfaces [J].
van der Veen, JF .
SURFACE SCIENCE, 1999, 433 :1-11
[10]   Vacancy-enhanced submonolayer nucleation of Si on Si(111) [J].
Wedding, JB ;
Wang, GC ;
Lu, TM .
SURFACE SCIENCE, 2002, 504 (1-3) :28-36