Surface potential measurement of oligothiophene ultrathin films by Kelvin probe force microscopy
被引:15
作者:
Umeda, K
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机构:Kyoto Univ, Dept Elect Sci & Engn, Sakyo Ku, Kyoto 6068501, Japan
Umeda, K
Kobayashi, K
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h-index: 0
机构:Kyoto Univ, Dept Elect Sci & Engn, Sakyo Ku, Kyoto 6068501, Japan
Kobayashi, K
Ishida, K
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机构:Kyoto Univ, Dept Elect Sci & Engn, Sakyo Ku, Kyoto 6068501, Japan
Ishida, K
Hotta, S
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机构:Kyoto Univ, Dept Elect Sci & Engn, Sakyo Ku, Kyoto 6068501, Japan
Hotta, S
Yamada, H
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机构:Kyoto Univ, Dept Elect Sci & Engn, Sakyo Ku, Kyoto 6068501, Japan
Yamada, H
Matsushige, K
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机构:Kyoto Univ, Dept Elect Sci & Engn, Sakyo Ku, Kyoto 6068501, Japan
Matsushige, K
机构:
[1] Kyoto Univ, Dept Elect Sci & Engn, Sakyo Ku, Kyoto 6068501, Japan
[2] Matsushita Elect Ind Co Ltd, Adv Technol Res Labs, Tama Ku, Kawasaki, Kanagawa 2148501, Japan
来源:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
|
2001年
/
40卷
/
6B期
关键词:
oligothiophene;
Kelvin probe force microscopy;
surface potential;
D O I:
10.1143/JJAP.40.4381
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
Surface structures and local surface potential of oligothiophene single molecular films deposited on metal substrates were investigated by Kelvin probe force microscopy using the frequency modulation detection method, Two-dimensional growth of the dimethylquinquethiophene (DM5T) films with the molecular axes perpendicular to the metal substrates was observed. Furthermore, the obtained surface potential of the DM5T film was 170 mV higher than that of Pt substrate and 200 mV lower than that of Ta substrate.