Properties of ZnO/CdS/CuInSe2 solar cells with improved performance

被引：114

作者：

AbuShama, JAM ^{[1
]}

Johnston, S ^{[1
]}

Moriarty, T ^{[1
]}

Teeter, G ^{[1
]}

Ramanathan, K ^{[1
]}

Noufi, R ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

PROGRESS IN PHOTOVOLTAICS | 2004年 / 12卷 / 01期

关键词：

copper indium. diselenide; CuInSe2; admittance spectroscopy; grazing-angle incidence; three-stage process; thin-film solar cells; photovoltaics;

D O I：

10.1002/pip.537

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We report the growth and characterization of low-bandgap record-efficiency ZnO/CdS/CuInSe2 thin-film solar cells. The total area conversion efficiency for this cell is 14-5%. This result has been measured and confirmed at the National Renewable Energy Laboratory under standard reporting conditions (1000 W/M-2 25degreesC, AM1.5 Global). The improved performance of the CuInSe2 solar cell is primarily due to a high current density. Material and device characterization data are presented. Published in 2004 by John Wiley Sons, Ltd.

引用

页码：39 / 45

页数：7

共 17 条

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