Photoluminescence of porous silicon surfaces stabilized through Lewis acid mediated hydrosilylation

被引:50
作者
Buriak, JM [1 ]
Allen, MJ [1 ]
机构
[1] Purdue Univ, Dept Chem, Brown Labs 1393, W Lafayette, IN 47907 USA
关键词
porous silicon; photoluminescence; hydrosilylation; alkene; alkyne; Lewis acid;
D O I
10.1016/S0022-2313(98)00067-2
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Lewis acid mediated hydrosilylation on porous silicon surfaces permits facile incorporation of a wide variety of functionalities through stable silicon-carbon bonds. The surfaces demonstrate high chemical stability with respect to hydrofluoric acid and aqueous base. The effects of the covalently bound surface groups on photoluminescence have been investigated and it was noted that alkyl and alkenyl termination induced only small decreases in photoluminescence efficiency. Aromatic substituents conjugated through a vinyl group, however, bring about almost complete quenching of the observed photoluminescence, regardless of substitution with either electron withdrawing (chloride) or donating (methyl) functionalities. The photoluminescence fatigue of dodecyl terminated surfaces in air for 12-16 h periods has been monitored and compared to unfunctionalized porous silicon. In air? the photoluminescence of dodecyl terminated surfaces degrades faster than the unfunctionalized porous silicon but under inert atmosphere (nitrogen), the rate of photoluminescence fatigue is slow in both cases and approximately equivalent. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:29 / 35
页数:7
相关论文
共 34 条
  • [1] TRIS(TRIMETHYLSILYL)SILANE AS A RADICAL-BASED REDUCING AGENT IN SYNTHESIS
    BALLESTRI, M
    CHATGILIALOGLU, C
    CLARK, KB
    GRILLER, D
    GIESE, B
    KOPPING, B
    [J]. JOURNAL OF ORGANIC CHEMISTRY, 1991, 56 (02) : 678 - 683
  • [2] Alkylation of Si surfaces using a two-step halogenation Grignard route
    Bansal, A
    Li, XL
    Lauermann, I
    Lewis, NS
    Yi, SI
    Weinberg, WH
    [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1996, 118 (30) : 7225 - 7226
  • [3] Porous silicon as a sacrificial material
    Bell, TE
    Gennissen, PTJ
    DeMunter, D
    Kuhl, M
    [J]. JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 1996, 6 (04) : 361 - 369
  • [4] Frontside micromachining using porous-silicon sacrificial-layer technologies
    Bischoff, T
    Muller, G
    Welser, W
    Koch, F
    [J]. SENSORS AND ACTUATORS A-PHYSICAL, 1997, 60 (1-3) : 228 - 234
  • [5] Lewis acid mediated functionalization of porous silicon with substituted alkenes and alkynes
    Buriak, JM
    Allen, MJ
    [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1998, 120 (06) : 1339 - 1340
  • [6] LASER-DYE IMPREGNATION OF OXIDIZED POROUS SILICON ON SILICON-WAFERS
    CANHAM, LT
    [J]. APPLIED PHYSICS LETTERS, 1993, 63 (03) : 337 - 339
  • [7] ABSOLUTE RATE CONSTANTS FOR THE ADDITION OF TRIETHYLSILYL RADICALS TO THE CARBONYL GROUP
    CHATGILIALOGLU, C
    INGOLD, KU
    SCAIANO, JC
    [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1982, 104 (19) : 5119 - 5123
  • [8] ORGANOSILANES AS RADICAL-BASED REDUCING AGENTS IN SYNTHESIS
    CHATGILIALOGLU, C
    [J]. ACCOUNTS OF CHEMICAL RESEARCH, 1992, 25 (04) : 188 - 194
  • [9] The structural and luminescence properties of porous silicon
    Cullis, AG
    Canham, LT
    Calcott, PDJ
    [J]. JOURNAL OF APPLIED PHYSICS, 1997, 82 (03) : 909 - 965
  • [10] Photo-assisted evolution of the photoluminescence spectrum of porous silicon immersed in hydrofluoric acid
    Davison, M
    Noor, UM
    Berlouis, L
    Uttamchandani, D
    ODonnell, KP
    [J]. THIN SOLID FILMS, 1996, 276 (1-2) : 303 - 305