Active pages: A computation model for intelligent memory
被引:136
作者:
Oskin, M
论文数: 0引用数: 0
h-index: 0
机构:
Univ Calif Davis, Dept Comp Sci, Davis, CA 95616 USAUniv Calif Davis, Dept Comp Sci, Davis, CA 95616 USA
Oskin, M
[1
]
Chong, FT
论文数: 0引用数: 0
h-index: 0
机构:
Univ Calif Davis, Dept Comp Sci, Davis, CA 95616 USAUniv Calif Davis, Dept Comp Sci, Davis, CA 95616 USA
Chong, FT
[1
]
Sherwood, T
论文数: 0引用数: 0
h-index: 0
机构:
Univ Calif Davis, Dept Comp Sci, Davis, CA 95616 USAUniv Calif Davis, Dept Comp Sci, Davis, CA 95616 USA
Sherwood, T
[1
]
机构:
[1] Univ Calif Davis, Dept Comp Sci, Davis, CA 95616 USA
来源:
25TH ANNUAL INTERNATIONAL SYMPOSIUM ON COMPUTER ARCHITECTURE, PROCEEDINGS
|
1998年
关键词:
D O I:
10.1109/ISCA.1998.694774
中图分类号:
TP3 [计算技术、计算机技术];
学科分类号:
0812 ;
摘要:
Microprocessors and memory systems suffer from a growing gap in performance. We introduce Active Pages, a computation model which addresses this gap by shifting data-intensive computations to the memory system. An Active Page consists of a page of data and a set of associated functions which can operate upon that data. We describe an implementation of Active Pages on RADram (Reconfigurable Architecture DRAM), a memory system based upon the integration of DRAM and reconfigurable logic. Results from the SimpleScalar simulator [BA97] demonstrate up to 1000X speedups on several applications using the RADram system versus conventional memory systems. We also explore the sensitivity of our results to implementations in other memory technologies.